2SK3111 |
RFQ for 2SK3111 |
![]() |
| Product | Manufacturers | Pack | D/C |
| 2SK3111 | - | TO-220 | 06+ |
The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
Features |
| · Gate voltage rating ±30 V· Low on-state resistance RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 10 A)· Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)· Avalanche capability rated· Built-in gate protection diode· Surface mount device available |